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RQJ0304DQDQA
Silicon P Channel MOS FET Power Switching
REJ03G1717-0100 Rev.1.00 Jul 28, 2008
Features
* Low gate drive VDSS : -30 V and 2.5 V gate drive * Low drive current * High speed switching * Small traditional package (MPAK)
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
3 D
3 1 2
2 G
1. Source 2. Gate 3. Drain
S 1
Notes: Marking is "DQ".
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) Note1 IDR Pch Note2 Tch Tstg Ratings -30 +8 / -12 -1.8 -8 1.8 0.8 150 -55 to +150 Unit V V A A A W C C
Notes: 1. PW 10 s, Duty cycle 1% 2. When using the glass epoxy board (FR-4 40 x 40 x 1 mm)
REJ03G1717-0100 Rev.1.00 Jul 28, 2008 Page 1 of 7
RQJ0304DQDQA
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Gate to source leak current Drain to source leak current Gate to source cutoff voltage Drain to source on state resistance Drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Total gate charge Gate to Source charge Gate to drain charge Body - drain diode forward voltage Notes: 3. Pulse test Symbol V(BR)DSS V(BR)GSS V(BR)GSS IGSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF Min -30 +8 -12 -- -- -- -0.4 -- -- 1.8 -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- -- -- 195 300 2.5 185 45 25 18 33 22 5 1.9 0.4 0.7 -0.9 Max -- -- -- +10 -10 -1 -1.4 245 420 -- -- -- -- -- -- -- -- -- -- -- -1.3 Unit V V V A A A V m m S pF pF pF ns ns ns ns nC nC nC V Test conditions ID = -10 mA, VGS = 0 IG = +100 A, VDS = 0 IG = -100 A, VDS = 0 VGS = +6 V, VDS = 0 VGS = -10 V, VDS = 0 VDS = -30 V, VGS = 0 VDS = -10 V, ID = -1 mA ID = -1.0 A, VGS = -4.5 V Note3 ID = -1.0 A, VGS = -2.5 V Note3 ID = -1.0 A, VDS = -10 V Note3 VDS = -10 V, VGS = 0, f = 1 MHz ID = -1.0 A VGS = -4.5 V RL = 10 Rg = 4.7 VDD = -10 V VGS = -4.5 V ID = -2.0 A IF = -2.0 A, VGS = 0 Note3
REJ03G1717-0100 Rev.1.00 Jul 28, 2008 Page 2 of 7
RQJ0304DQDQA
Main Characteristics
Maximum Channel Power Dissipation Curve
1
-10
10
Maximum Safe Operation Area
Channel Dissipation Pch (W)
1 s m
0 s
Drain Current ID (A)
0.8
s s m m 10 100 ion at er Op
-1
DC
0.6
0.4
-0.1
Operation in this area is limited by RDS(on)
0.2
Ta = 25C 1 Shot Pulse
0 0
25
50
75
100
125
150
-0.01 -0.01
-0.1
-1
-10
-100
Ambient Temperature Ta (C)
*When using the glass epoxy board (FR-4 40 x 40 x 1 mm)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
-8 V
Typical Transfer Characteristics (1)
-4.4 V
-10
-10 V
-5 V -4.8 V
Pulse Test Tc = 25C
-2.0
VDS = -10 V Pulse Test
Drain Current ID (A)
-6
Drain Current ID (A)
-8
-4
-2.0 V -1.6 V VGS = 0V
-4.2 V -4.0 V -3.8 V -3.6 V -3.4 V -3.2 V -3.0 V -2.8 V -2.6 V -2.4 V
-1.6
-1.2
-0.8
Tc = 75C
-2
-0.4
25C -25C
0
0
-2
-4
-6
-8
-10
0
0
1
2
3
4
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Gate to Source Cutoff Voltage vs.
Gate to Source Cutoff Voltage VGS(off) (V)
Typical Transfer Characteristics (2)
-1
Tc = 75C
Case Temperature
-1.5
Drain Current ID (A)
-0.1
25C -25C
-1 mA
ID = -10 mA
-1.0
-0.01
-0.5
-0.1 mA
-0.001
VDS = -10 V Pulse Test
VDS = -10 V Pulse Test
-0.0001 0 -0.5 -1 -1.5 -2 -2.5 -3
0 -25 0 25 50 75 100 125 150
Gate to Source Voltage VGS (V)
Case Temperature Tc (C)
REJ03G1717-0100 Rev.1.00 Jul 28, 2008 Page 3 of 7
RQJ0304DQDQA
Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current
Drain to Source on State Resistance RDS(on) ()
Drain to Source Saturation Voltage VDS(on) (V)
-0.8
Pulse Test Tc = 25C
1
VGS = -2.5 V -4.5 V
-0.6
-0.4
ID = -2.0 A
-1.5 A
0.1
-10 V
-0.2
-1.0 A -0.5 A
0 0
-2
-4
-6
-8
-10
0.01 -0.1
Pulse Test Tc = 25C
-1
-10
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Case Temperature (1)
Drain Current ID (A) Static Drain to Source on State Resistance vs. Case Temperature (2)
Drain to Source on State Resistance RDS(on) ()
Drain to Source on State Resistance RDS(on) ()
0.6
ID = -2.0 A
0.35 0.3
-1.5 A ID = -2.0 A
0.5
-1.5 A
0.4
-1.0 A
0.25 0.2 0.15 0.1 0.05 Pulse Test VGS = -4.5 V 0 -25 0 25 50
-0.5A -1.0 A
0.3
-0.5A
0.2 0.1 0 -25
Pulse Test VGS = -2.5 V
0
25
50
75
100 125 150
75
100 125 150
Case Temperature Tc (C)
Case Temperature Tc (C)
Zero Gate Voltage Drain current vs. Case Temperature
-10000
Pulse Test VGS = 0 V VDS = -30 V
10 Pulse Test VDS = -10 V
Zero Gate Voltage Drain current IDSS (nA)
Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance |yfs| (S)
-1000
-25C 25C
-100
Tc = 75C
-10
1 -0.1
1
10
-1 -25
0
25
50
75
100 125 150
Drain Current ID (A)
Case Temperature Tc (C)
REJ03G1717-0100 Rev.1.00 Jul 28, 2008 Page 4 of 7
RQJ0304DQDQA
Dynamic Input Characteristics
Drain to Source Voltage VDS (V)
VDD = -10 V -25 V
Switching Characteristics
Gate to Source Voltage VGS (V)
0
1000
VGS = -4.5 V, VDD = -10 V Rg = 4.7 , duty 1 % Tc = 25C
0
-10
-2
Switching Time t (ns)
100
td(on) td(off)
tr
-20
VDD = -10 V -25 V
-4
10
-30
-6
tf
-40 0
ID = -2.0 A Tc = 25C
1 2 3 4 5
-8
1 -0.01
-0.1
-1
-10
Gate Charge Qg (nC)
Drain Current ID (A)
Typical Capacitance vs. Drain to Source Voltage
1000
VGS = 0 V f = 1 MHz
Input Capacitance vs. Gate to Source Voltage
360 340 320 300 280 260
Ciss, Coss, Crss (pF)
Ciss
Coss Crss
10
Ciss (pF)
100
1 -0 -5 -10 -15 -20 -25 -30
VDS = 0 f = 1MHz
2 4 6 8 10
240 -10 -8 -6 -4 -2 0
Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage
-10
Gate to Source Voltage VGS (V) Body-Drain Diode Forward Voltage vs. Case Temperature
-0.6
VGS = 0
Reverse Drain Current IDR (A)
Pulse Test Tc = 25C
-8
Body-Drain Diode Forward Voltage VSDF (V)
-0.5
ID = -10 mA
-6
-10 V -4.5 V
-0.4
-1 mA
-4
-2.5 V
-0.3
-2
0
VGS = 0, 2.5, 4.5, 10 V
0
-0.4
-0.8
-1.2
-1.6
-0.2 -25
0
25
50
75
100 125 150
Source to Drain Voltage VSD (V)
Case Temperature Tc (C)
REJ03G1717-0100 Rev.1.00 Jul 28, 2008 Page 5 of 7
RQJ0304DQDQA
Switching Time Test Circuit
Vin Monitor D.U.T. Vout Monitor RL VDD = -30 V Vout td(on) Vin 10%
90%
Switching Time Waveform
Rg
Vin -10 V
90%
90%
10%
10% td(off)
tf
tr
REJ03G1717-0100 Rev.1.00 Jul 28, 2008 Page 6 of 7
RQJ0304DQDQA
Package Dimensions
Package Name MPAK JEITA Package Code SC-59A RENESAS Code PLSP0003ZB-A Previous Code MPAK(T) / MPAK(T)V MASS[Typ.] 0.011g
D
e
A
Q
c
E
HE
L
L1 A3
LP
A
A xM S A b
e
Reference Dimension in Millimeters Symbol Min Nom Max
A2
A
A1
S b
I1
e1
c
b2
A-A Section
Pattern of terminal position areas
A A1 A2 A3 b c D E e HE L L1 LP x b2 e1 I1 Q
1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25
1.1 0.25 0.4 0.16 1.5 0.95 2.8
1.3 0.1 1.2 0.5 0.26 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.05
1.95 0.3
Ordering Information
Part No. RQJ0304DQDQATL-E 3000 pcs. Quantity Shipping Container 178 mm reel, 8 mm Emboss taping
REJ03G1717-0100 Rev.1.00 Jul 28, 2008 Page 7 of 7
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